Defect transition energies and the density of electronic states in hydrogenated amorphous silicon,” et al., Journal of Non-Crystalline Solids 299, 621–625 (2002).


Using photoluminescence excitation (PLE) spectroscopy, we report detailed measurements of the fundamental absorption threshold below the optical gap in hydrogenated amorphous silicon (a-Si:H). These measurements suggest that the density of neutral defects is much greater than the densities of charged defects in intrinsic a-Si:H. The positions and widths of the corresponding transition energies are determined and agree with two models proposed to describe the density of states in a-Si:H.

«  Surface characterisation by near-field microscopy | Cornea and cartilege denaturation »